december 2014 fdb86366_f085 n-channel powertrench ? mosfet ?2014 fairchild semiconductor corporation fdb86366_f085 rev. c1 www.fairchildsemi.com 1 fdb86366_f085 n-channel powertrench ? mosfet 80 v, 110 a, 3.6 m features ? typical r ds(on) = 2.8 m at v gs = 10v, i d = 80 a ? typical q g(tot) = 86 nc at v gs = 10v, i d = 80 a ? uis capability ? rohs compliant ? qualified to aec q101 applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? integrated starter/alternator ? primary switch for 12v systems g s d d g s to-263 fdb series mosfet maximum ratings t j = 25c unless otherwise noted. symbol parameter ratings units v dss drain-to-source voltage 80 v v gs gate-to-source voltage 20 v i d drain current - continuous (v gs =10) (note 1) t c = 25c 110 a pulsed drain current t c = 25c see figure 4 e as single pulse avalanche energy (note 2) 178 mj p d power dissipation 176 w derate above 25 o c1 . 2 w / o c t j , t stg operating and storage temperature -55 to + 175 o c r jc thermal resistance, junction to case 0.85 o c/w r ja maximum thermal resistance, junction to ambient (note 3) 43 o c/w package marking and ordering information device marking device package reel size tape width quantity fdb86366 fdb86366_f085 d2-pak(to-263) 330mm 24mm 800units notes: 1: current is limited by bondwire configuration. 2: starting t j = 25c, l = 87uh, i as = 64a, v dd = 80v during inductor charging and v dd = 0v during time in avalanche. 3: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design, while r ja is determined by the board design. the maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. for ? current ? package ? drawing, ? please ? refer ? to ? the ? fairchild ? web \ site ? at ? https://www.fairchildsemi.com/package \ drawings/to/ to263a02.pdf
fdb86366_f085 n-channel powertrench ? mosfet fdb86366_f085 rev. c1 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted. off characteristics on characteristics dynamic characteristics symbol parameter test conditions min. typ. max. units b vdss drain-to-source breakdown voltage i d = 250 p a, v gs = 0v 80 - - v i dss drain-to-source leakage current v ds = 8 0 v , t j = 25 o c --1 p a v gs = 0v t j = 175 o c (note 4) - - 1 ma i gss gate-to-source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 2.0 3.0 4.0 v r ds(on) drain to source on resistance i d = 80a, v gs = 10v t j = 25 o c -2.83.6m : t j = 175 o c (note 4) - 5.5 7.0 m : c iss input capacitance v ds = 40v, v gs = 0v, f = 1mhz - 6280 - pf c oss output capacitance - 1010 - pf c rss reverse transfer capacitance - 32 - pf r g gate resistance f = 1mhz - 2.1 - : q g(tot) total gate charge v gs = 0 to 10v v dd = 64v i d = 80a -86112nc q g(th) threshold gate charge v gs = 0 to 2v - 12 - nc q gs gate-to-source gate charge -30-nc q gd gate-to-drain ?miller? charge - 18 - nc switching characteristics drain-source diode characteristics note: 4: the maximum value is specified by design at t j = 175c. product is not tested to this condition in production. t on turn-on time v dd = 40v, i d = 80a, v gs = 10v, r gen = 6 : - - 144 ns t d(on) turn-on delay - 30 - ns t r rise time - 76 - ns t d(off) turn-off delay - 40 - ns t f fall time - 17 - ns t off turn-off time - - 83 ns v sd source-to-drain diode voltage i sd =80a, v gs = 0v - - 1.25 v i sd = 40a, v gs = 0v - - 1.2 v t rr reverse-recovery time i f = 80a, di sd /dt = 100a/ p s v dd = 64v -6787ns q rr reverse-recovery charge - 80 104 nc
fdb86366_f085 n-channel powertrench ? mosfet fdb86366_f085 rev. c1 www.fairchildsemi.com 3 typical characteristics figure 1. normalized power dissipation vs. case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature( o c) figure 2. maximum continuous drain current vs. case temperature 25 50 75 100 125 150 175 200 0 50 100 150 200 current limited by silicon current limited by package v gs = 10v i d , drain current (a) t c , case temperature( o c) figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
fdb86366_f085 n-channel powertrench ? mosfet fdb86366_f085 rev. c1 www.fairchildsemi.com 4 figure 5. 0.1 1 10 100 200 0.1 1 10 100 1000 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) 100ms operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c forward bias safe operating area 0.001 0.01 0.1 1 10 100 1000 1 10 100 500 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 2345678 0 50 100 150 200 250 300 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 0.00.20.40.60.81.01.2 0.1 1 10 100 300 t j = 25 o c t j = 175 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) forward diode characteristics figure 9. 012345 0 50 100 150 200 250 300 5v i d , drain current (a) v ds , drain to source voltage (v) 80 s pulse width t j = 25 o c v gs 15v top 10v 8v 7v 6v 5.5v 5v bottom saturation characteristics figure 10. 012345 0 50 100 150 200 250 300 5v i d , drain current (a) v ds , drain to source voltage (v) v gs 15v top 10v 8v 7v 6v 5.5v 5v bottom 80 s pulse width t j = 175 o c saturation characteristics typical characteristics
fdb86366_f085 n-channel powertrench ? mosfet fdb86366_f085 rev. c1 www.fairchildsemi.com 5 figure 11. 45678910 0 10 20 30 40 50 i d = 80a pulse duration = 80 s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m ) v gs , gate to source voltage (v) t j = 25 o c t j = 175 o c r dson vs. gate voltage figure 12. normalized r dson vs. junction temperature -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pulse duration = 80 s duty cycle = 0.5% max i d = 80a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) figure 13. -80 -40 0 40 80 120 160 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v gs = v ds i d = 250 a normalized gate threshold voltage t j , junction temperature( o c) normalized gate threshold voltage vs. temperature figure 14. -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 i d = 5ma normalized drain to source breakdown voltage t j , junction temperature ( o c) normalized drain to source breakdown voltage vs. junction temperature figure 15. 0.1 1 10 100 10 100 1000 10000 100000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) capacitance vs. drain to source voltage figure 16. 0 153045607590 0 2 4 6 8 10 v dd = 40v v dd =32v i d = 80a v dd = 48v q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs. gate to source voltage typical characteristics
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